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s mhop microelectronics c orp. a 8 80 c/w thermal characteristics c/w absolute maximum ratings ( t c =25 c unless otherwise noted ) thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja ver 1.0 www.samhop.com.tw may,11,2010 1 STB416D green product d1/d2 s1 g1 s2 g2 d1/d2 dual enhancement mode field effect transistor (n and p chann el) n-ch p -ch g 1 d 1 s 1 g 2 d 2 s 2 product summary (n-channel) v dss i d r ds(on) (m ) max 40v 18a 43 @ vgs=4.5v 28 @ vgs=10v product summary (p-channel) v dss i d r ds(on) (m ) max -40v -16a 61 @ vgs=-4.5v 36 @ vgs=-10v symbolv ds v gs i dm e as w a p d c 15.6 -55 to 150 i d units parameter 40 18 40 vv 20 t c =25 c gate-source voltage drain-source voltage mj n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg t c =25 c -40 -16 -40 20 p-channel t c =70 c a 14.4 -12.8 10 w t c =70 c 64 36 stb series to-263 5l
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1 v 22 g fs 20 s v sd c iss 700 pf c oss 78 pf c rss 60 pf q g 13.5 nc 12.2 nc q gs 17 nc q gd 19.5 t d(on) 11.5 ns t r 1.3 ns t d(off) 3.2 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delaytime v ds =20v,i d =9a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =9a v ds =10v , i d =9a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =7.5a 28 32 43 m ohm c f=1.0mhz c v ds =20v,i d =9a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a 0.8 1.3 v STB416D ver 1.0 www.samhop.com.tw may,11,2010 2 1.9 nc 5.7 v ds =20v,i d =9a,v gs =4.5v n-channel electrical characteristics ( t c =25 c unless otherwise noted )
4 symbol min typ max units bv dss -40 v -1 i gss 100 na v gs(th) -1 v 29 g fs 29 s v sd c iss 1050 pf c oss 125 pf c rss 101 pf q g 17.5 nc 20 nc q gs 63.2 nc q gd 30.5 t d(on) 22.5 ns t r 2 ns t d(off) 6.2 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-8a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-8a v ds =-10v , i d =-8a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-6.5a 36 45 61 m ohm c f=1.0mhz c v ds =-20v,i d =-8a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-2a -0.79 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ STB416D www.samhop.com.tw may,11,2010 3 nc v ds =-20v,i d =-8a,v gs =-4.5v 11.1 _ -2 ver 1.0
i d , drain current(a) i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage STB416D www.samhop.com.tw may,11,2010 4 t j( c ) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current (a) figure 3. on-resistance vs. drain current and gate voltage tj, junction temperature ( c ) figure 4. on-resistance variation with drain current and temperature tj, junction temperature ( c ) figure 5. gate threshold variation with temperature tj, junction temperature ( c ) figure 6. breakdown voltage variation with temperature ver 1.0 n-channel 35 28 21 14 7 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 3v v g s = 3.5v v g s = 1 0v v g s = 4 .5v v g s = 4v 30 24 18 12 6 0 0 0.9 5.4 4.5 3.6 2.7 1.8 t j=125 c 25 c -55 c 60 50 40 30 20 10 1 1 7 14 21 28 35 v g s =10v v g s =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =10v i d =9a v g s =4.5v i d =7.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua
STB416D ver 1.0 www.samhop.com.tw may,11,2010 5 v gs , gate-source voltage (v) figure 7. on-resistance vs. gate-source voltage v sd , body diode forward voltage (v) figure 8. body diode forward voltage variation with source current v ds , drain-to source voltage (v) figure 9. capacitance qg, total gate charge (nc) figure 10. gate charge rg, gate resistance ( ) figure 11. switching characteristics v ds , gate-source voltage (v) figure 12. maximum safe operating area r ds(on) (m ) is, source-drain current(a) c, capacitance(pf) v gs , gate to source voltage(v) switching time(ns) i d , drain current(a) 1 10 100 1 10 100 300 vds=20v,id=1a vgs=10v td(on) tr td(off ) tf 90 75 60 45 30 15 0 2 4 6 8 10 0 i d =9a 25 c 75 c 125 c 20.010.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c ciss coss crss 1200 1000 800 600 400 200 0 10 15 20 25 30 0 5 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =20v i d =9a 0.1 1 10 40 10 1 0.1 0.03 80 v gs =10v single pulse t a =25 c r ds ( o n) l i m it 1m s 1 0 0 u s dc 1 0 0 u s
t p v ( br )d ss i a s STB416D ver 1.0 www.samhop.com.tw may,11,2010 6 unclamped inductive test circuit unclamped inductive wave forms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v normalized transient thermal resistance 21 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 d=0.5 0.1 0.01 s ingle p uls e 0.05 p dm t 1 t 2 1. r ? j a (t)=r (t) * r ? j a 2. r ? j a =s ee datas heet 3. t j m- t a = p dm * r ? j a (t) 4. duty c ycle, d=t 1 /t 2
STB416D www.samhop.com.tw may,11,2010 7 t j( c ) -v ds , drain-to-source voltage(v) figure 1. output characteristics figure 2. transfer characteristics -i d , drain current (a) figure 3. on-resistance vs. drain current and gate voltage tj, junction temperature ( c ) figure 4. on-resistance variation with drain current and temperature tj, junction temperature ( c ) figure 5. gate threshold variation with temperature tj, junction temperature ( c ) figure 6. breakdown voltage variation with temperature 30 24 18 12 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = -4 v v g s = -3 .5v v g s = -4 .5 v v g s = -1 0v 30 24 18 12 6 0 0 1.0 6.0 5.0 4.0 3.0 2.0 t j=125 c 25 c -55 c 90 75 60 45 30 15 1 v g s =-10v v g s =-4.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 v g s =-4.5v i d =-6.5a v g s =-10v i d =-8a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua ver 1.0 p-channel v g s = -3v v g s = -5 v 1 6 12 18 24 30 v ds =v g s i d =-250ua -i d , drain current(a) -v gs , gate-to-source voltage(v) -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -vth, normalized gate-source threshold voltage -bvdss, normalized drain-source breakdown voltage
120 100 80 60 40 0 0 i d =-8a 20 25 c 75 c 125 c 10 15 20 25 30 1800 1500 1200 900 600 300 0 ciss coss crss STB416D ver 1.0 www.samhop.com.tw may,11,2010 8 v gs , gate-source voltage (v) figure 7. on-resistance vs. gate-source voltage v sd , body diode forward voltage (v) figure 8. body diode forward voltage variation with source current v ds , drain-to source voltage (v) figure 9. capacitance qg, total gate charge (nc) figure 10. gate charge rg, gate resistance ( ) figure 11. switching characteristics v ds , gate-source voltage (v) figure 12. maximum safe operating area 10 86 4 2 0 9 12 15 18 21 24 v ds =-20v i d =-8a 6 3 0 100 10 0.1 1 1 10 100 r d s ( o n) l i m i t 1 10 100 1 10 100 vds=-20v,id=-1a vgs=-10v td(on) td(off ) tf 6 60 10 1 20 0 0.3 0.6 1.2 0.9 1.5 125 c 25 c 75 c 0 5 1000 tr v g s =-10v s ingle p uls e t c=25 c 100 u s 1 ms 10ms dc 1 0 us r ds(on) (m ) -is, source-drain current(a) c, capacitance(pf) -v gs , gate to source voltage(v) switching time(ns) -i d , drain current(a) 2 4 6 8 10
t p v ( br )d ss i a s STB416D ver 1.0 www.samhop.com.tw may,11,2010 9 unclamped inductive test circuit unclamped inductive wave forms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v normalized transient thermal resistance 21 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 d=0.5 0.1 0.01 s ingle p uls e 0.05 p dm t 1 t 2 1. r ? j a (t)=r (t) * r ? j a 2. r ? j a =s ee datas heet 3. t j m- t a = p dm * r ? j a (t) 4. duty c ycle, d=t 1 /t 2
STB416D ver 1.0 www.samhop.com.tw may,11,2010 10 ?? ? ?? ?? ? e ? ? ? 4.40 0.66 0.00 0.36 1.50 r e f . 2.29 9.80 1.25 8.60 14.6 4.80 0.91 0.30 0.50 2.79 10.4 1.45 9.00 15.8 min max millimeters ref. a b l4 c l3 l1 e c2 l2 d e l 1.27 r e f . 1.70 r e f . dimensions 0 8
to-263 carrier tape STB416D www.samhop.com.tw may,11,2010 11 to-263 tape data ver1.0 unit: @ symbol spec a0 b0 k0 5.21 p0 p1 p2 t 4.00 2 0.10 16.0 2 0.10 2.00 2 0.10 0.356 2 0.13 10.80 2 0.10 16.13 2 0.10 2 0.10 e f 24.0 +0.3 - 0.1 d1 1.50 2 0.25 w 1.75 2 0.10 11.50 2 0.10 1.55 2 0.05 d0 10p0 40.0 2 0.20

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